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Low Voltage (<150V) GaN HEMT
Description
The Innoscience Low Voltage InnoGaN (GaN-on-Silicon) e-mode High-Electron-Mobility-Transistors feature products with a Voltage of below 150V.
Features
- GaN-on-Silicon e-mode (HEMT) technology
- Very low gate charge
- Ultra-low on resistance
- Very small package size
- Zero reverse recovery charge
Applications
Synchronous rectification, Class-D audio, High-frequency DC-DC converter, Communication base station, Motor driver.