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High Voltage (>600V) GaN HEMT
Description
The Innoscience High Voltage InnoGaN (GaN-on-Silicon) e-mode High-Electron-Mobility-Transistors feature products with a Voltage of above 650V.
Features
- E-mode transistor - Normally off power switch
- Ultra high switching frequency
- No reverse-recovery frequency
- Low gate charge, low output charge
- Qualified for industrial applications according to JEDEC Standards
- ESD safeguard
- RoHs, Pb-free, REACH compliant.
Applications
AC-DC converters, DC-DC converters, Totem pole PFC, Fast battery charging, High-density power conversion, High-efficiency power conversion, DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DC-DC converter, LED driver, Notebook/AIO adaptor, Desktop PC/ATX/TV/Power tool power supply.