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LPDDR4/4X (Low Power DDR4 & DDR4X)
Description
Alliance’s Memory’s LPDDR4 and LPDDR4X SDRAMs with on-chip ECC offer low-voltage operation of 1.1V/1.8V and 0.6V, respectively, in the 200-ball FBGA package. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the devices deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. Available in densities from 2Gb to 8Gb, the AEC-Q100 qualified SDRAMs operate over a temperature range of -40°C to +105°C.
Features
The 2Gb/4Gb/8Gb LPDDR4 SDRAM offers the following key features:- Configuration:
- x32 for 2-channels per device (AS4C64M32MD4, AS4C128M32MD4, AS4C256M32MD4)
- x16 for 1-channel per device (AS4C128M16MD4, AS4C256M16MD4)
- 8 internal banks per each channel
- On-Chip ECC:
- Single-bit error correction (per 64-bits), which will maximize reliability
- Optional ERR output signal per channel, which indicates ECC event occurrence
- ECC Register, which controls ECC function
- Low-voltage Core and I/O Power Supplies:
- VDD2 /VDDQ = 1.06-1.17V, VDD1 = 1.70-1.95V
- LVSTL(Low Voltage Swing Terminated Logic) I/O Interface
- Internal VREF and VREF Training
- Dynamic ODT :
- DQ ODT :VSSQ Termination
- CA ODT :VSS Termination
- Selectable output drive strength (DS)
- Max. Clock Frequency : 1.6GHz (3.2Gbps for one channel)
- 16-bit Pre-fetch DDR data bus
- Single data rate (multiple cycles) command/address bus